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| inchange semiconductor isc product specification isc website www.iscsemi.cn 1 isc silicon npn power transistor 2SD1533 description collector-base breakdown voltage- : v (br)cbo = 500v(min.) wide area of safe operation applications designed for high power am plifier applications. absolute maximum ratings (t a =25 ) symbol parameter value unit v cbo collector-base voltage 500 v v ceo collector-emitter voltage 400 v v ebo emitter-base voltage 12 v i c collector current 7 a i cm collector current-peak 14 a i b base current 0.5 a p c collector power dissipation @t a =25 1.4 w collector power dissipation @t c =25 50 t j junction temperature 150 t stg storage temperature range -55~150
inchange semiconductor isc product specification isc website www.iscsemi.cn 2 isc silicon npn power transistor 2SD1533 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 0.1a; i b = 0 400 v v ce (sat) collector-emitter satu ration voltage i c = 7a; i b = 70ma 2.0 v v be (sat) base-emitter satura tion voltage i c = 7a; i b = 70ma 2.5 v i cbo collector cutoff current v cb = 500v; i e = 0 0.1 ma i ceo collector cutoff current v ce = 400v; i b = 0 0.1 ma i ebo emitter cutoff current v eb = 12v; i c = 0 100 ma h fe-1 dc current gain i c = 2a; v ce = 2v 500 h fe-2 dc current gain i c = 6a; v ce = 2v 200 switching times t on turn-on time i c = 7a; i b1 = -i b2 = 70ma, v cc = 300v 1.5 s t stg storage time 5.0 s t f fall time 6.5 s |
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